Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma

Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

Atomic Layer Deposition of TiO

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Atomic layer deposition of GaN using GaCl3 and NH3

GaN films were grown on Si 100 substrate by atomic layer deposition ALD using GaCl3 and NH3. Growth conditions were identified for which the growth rate exhibited a plateau at 2.0 Å /cycle, consistent with self-limiting adsorption. A relatively wide temperature window 500–750 °C for ALD growth mode was also established for one flow sequence schedule. In this limit, both the 0002 and 101̄1 orient...

Atomic Layer Deposition of Fe2O3 Using Ferrocene and Ozone

Growing interest in Fe2O3 as a light harvesting layer in solar energy conversion devices stems from its unique combination of stability, nontoxicity, and exceptionally low material cost. Unfortunately, the known methods for conformally coating high aspect ratio structures with Fe2O3 leave a glaring gap in the technologically relevant temperature range of 170-350 C. Here, we elucidate a self-lim...

Atomic layer deposition: an overview.